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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):15 A
  • Voltage - Collector Emitter Breakdown (Max):200 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 1A, 10A
  • Current - Collector Cutoff (Max):100µA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 5A, 4V
  • Power - Max:150 W
  • Frequency - Transition:20MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-ESIP
  • Supplier Device Package:MT-200

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