TB100EP

Technical Details

• Series:-
• Package:Tape & Box (TB)
• Part Status:Active
• Transistor Type:NPN
• Current - Collector (Ic) (Max):1 A
• Voltage - Collector Emitter Breakdown (Max):700 V
• Vce Saturation (Max) @ Ib, Ic:1V @ 150mA, 750mA
• Current - Collector Cutoff (Max):100µA

• DC Current Gain (hFE) (Min) @ Ic, Vce:14 @ 100mA, 5V
• Power - Max:2 W
• Frequency - Transition:-
• Operating Temperature:150°C
• Mounting Type:Through Hole
• Package / Case:TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package:TO-92-3