EPC2012C
EPC
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGANFET N-CH 200V 5A DIE OUTLINE
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet EPC2012C Datasheet
-
ECAD Model
- Share
In Stock: 29,333
Can ship immediately
Pricing:
- 1$2.76
- 2,500$1.23474
Quote It
Technical Details
- Series:eGaN®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):5V
- Rds On (Max) @ Id, Vgs:100mOhm @ 3A, 5V
- Vgs(th) (Max) @ Id:2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 5 V
- Vgs (Max):+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:Die Outline (4-Solder Bar)
- Package / Case:Die
Related Products
GANFET N-CH 100V 18A DIE
- 1: $2.99000
- 2500: $1.33719
GANFET N-CH 100V 48A DIE
- 1: $3.32000
GANFET N-CH 100V DIE
- 1: $4.52000
GAN TRANS 200V 8MOHM BUMPED DIE
- 1: $6.12000
