SCT3030KLGC11

ROHM Semiconductor
In Stock: 922

Can ship immediately

Pricing:
  • 1$70.79
  • 10$67.25215
  • 30$65.48287
  • 120$61.94317

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):18V
  • Rds On (Max) @ Id, Vgs:39mOhm @ 27A, 18V
  • Vgs(th) (Max) @ Id:5.6V @ 13.3mA

 

  • Gate Charge (Qg) (Max) @ Vgs:131 nC @ 18 V
  • Vgs (Max):+22V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds:2222 pF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):339W (Tc)
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247N
  • Package / Case:TO-247-3

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