SI4435FDY-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 30V 12.6A 8SOIC
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI4435FDY-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 22,439
Can ship immediately
Pricing:
- 1$0.51
- 2,500$0.15945
- 5,000$0.15029
- 12,500$0.14113
- 25,000$0.13014
- 62,500$0.12556
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Technical Details
- Series:TrenchFET® Gen III
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:12.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:19mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):4.8W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SOIC
- Package / Case:8-SOIC (0.154", 3.90mm Width)
