SI2333DDS-T1-GE3

Vishay / Siliconix
In Stock: 31,694

Can ship immediately

Pricing:
  • 1$0.44
  • 3,000$0.17113
  • 6,000$0.1607
  • 15,000$0.15027
  • 30,000$0.14297
  • 75,000$0.14221

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Technical Details

  • Series:TrenchFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):12 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:28mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:35 nC @ 8 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:1275 pF @ 6 V
  • FET Feature:-
  • Power Dissipation (Max):1.2W (Ta), 1.7W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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