SI2308BDS-T1-GE3

Vishay / Siliconix
In Stock: 39,802

Can ship immediately

Pricing:
  • 1$0.57
  • 3,000$0.20739
  • 6,000$0.19402
  • 15,000$0.18063
  • 30,000$0.17126

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Technical Details

  • Series:TrenchFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:156mOhm @ 1.9A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):1.09W (Ta), 1.66W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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