CSD17579Q3A

Texas Instruments
In Stock: 35,126

Can ship immediately

Pricing:
  • 1$0.7
  • 2,500$0.24047
  • 5,000$0.22544
  • 12,500$0.21793

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Technical Details

  • Series:NexFET™
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:10.2mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:1.9V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:998 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3.2W (Ta), 29W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-VSONP (3x3.15)
  • Package / Case:8-PowerVDFN

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