BSZ060NE2LSATMA1

IR (Infineon Technologies)
In Stock: 38,507

Can ship immediately

Pricing:
  • 1$0.72
  • 5,000$0.3003
  • 10,000$0.28918
  • 25,000$0.28312

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Technical Details

  • Series:OptiMOS™
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:9.1 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 12 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 26W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TSDSON-8-FL
  • Package / Case:8-PowerTDFN

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