BSZ086P03NS3GATMA1

IR (Infineon Technologies)
In Stock: 5,657

Can ship immediately

Pricing:
  • 1$0.88
  • 5,000$0.33059
  • 10,000$0.31835
  • 25,000$0.31167

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Technical Details

  • Series:OptiMOS™
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:13.5A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:8.6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3.1V @ 105µA

 

  • Gate Charge (Qg) (Max) @ Vgs:57.5 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:4785 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 69W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TSDSON-8
  • Package / Case:8-PowerTDFN

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