SISS63DN-T1-GE3

Technical Details

• Series:TrenchFET® Gen III
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:35.1A (Ta), 127.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
• Rds On (Max) @ Id, Vgs:2.7mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id:1.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:236 nC @ 8 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:7080 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):5W (Ta), 65.8W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PowerPAK® 1212-8S
• Package / Case:PowerPAK® 1212-8S