CSD19537Q3

Texas Instruments
In Stock: 3,500

Can ship immediately

Pricing:
  • 1$1.39
  • 2,500$0.52426

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Technical Details

  • Series:NexFET™
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:14.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:3.6V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):2.8W (Ta), 83W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-VSON (3.3x3.3)
  • Package / Case:8-PowerVDFN

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