BSP135H6327XTSA1

IR (Infineon Technologies)
In Stock: 35,862

Can ship immediately

Pricing:
  • 1$1.32
  • 1,000$0.66931
  • 2,000$0.6293
  • 5,000$0.60129
  • 10,000$0.58128

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Technical Details

  • Series:SIPMOS®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):0V, 10V
  • Rds On (Max) @ Id, Vgs:45Ohm @ 120mA, 10V
  • Vgs(th) (Max) @ Id:1V @ 94µA

 

  • Gate Charge (Qg) (Max) @ Vgs:4.9 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:146 pF @ 25 V
  • FET Feature:Depletion Mode
  • Power Dissipation (Max):1.8W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-223-4
  • Package / Case:TO-261-4, TO-261AA

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