IRF6668TRPBF
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 80V 55A DIRECTFET MZ
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF6668TRPBF Datasheet
-
ECAD Model
- Share
In Stock: 26,533
Can ship immediately
Pricing:
- 1$1.75
- 4,800$0.77011
- 9,600$0.75396
Quote It
Technical Details
- Series:HEXFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):80 V
- Current - Continuous Drain (Id) @ 25°C:55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:15mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:4.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1320 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.8W (Ta), 89W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DIRECTFET™ MZ
- Package / Case:DirectFET™ Isometric MZ
Related Products
MOSFET N-CH 200V 15.2A TDSON-8
BSC900N20NS3GATMA1 Datasheet- 1: $1.78000
- 5000: $0.78578
- 10000: $0.76930
MOSFET N-CH 200V 15.2A 8TSDSON
BSZ900N20NS3GATMA1 Datasheet- 1: $1.78000
- 5000: $0.78578
- 10000: $0.76930
MOSFET N-CH 40V 27A/100A TDSON
- 1: $1.82000
- 5000: $0.80037
- 10000: $0.78358
