BSC16DN25NS3GATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 250V 10.9A TDSON-8-5
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSC16DN25NS3GATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 5,819
Can ship immediately
Pricing:
- 1$1.93
- 5,000$0.85166
- 10,000$0.8338
Quote It
Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):250 V
- Current - Continuous Drain (Id) @ 25°C:10.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:165mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 32µA
- Gate Charge (Qg) (Max) @ Vgs:11.4 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):62.5W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TDSON-8-5
- Package / Case:8-PowerTDFN
