SIR880DP-T1-GE3

Vishay / Siliconix
In Stock: 3,768

Can ship immediately

Pricing:
  • 1$2.86
  • 3,000$1.45059
  • 6,000$1.40026

Quote It

Technical Details

  • Series:TrenchFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):80 V
  • Current - Continuous Drain (Id) @ 25°C:60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5.9mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.8V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2440 pF @ 40 V
  • FET Feature:-
  • Power Dissipation (Max):6.25W (Ta), 104W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Related Products


IXTY01N100D-TRL

MOSFET N-CH 1000V 400MA TO252AA

  • 1: $2.86000

BSC060N10NS3GATMA1

MOSFET N-CH 100V 14.9/90A 8TDSON

BSC060N10NS3GATMA1 Datasheet
  • 1: $2.59000
  • 5000: $1.59475

BSC160N15NS5ATMA1

MOSFET N-CH 150V 56A TDSON

BSC160N15NS5ATMA1 Datasheet
  • 1: $2.60000
  • 5000: $1.14557

IRF6644TRPBF

MOSFET N-CH 100V 10.3A DIRECTFET

IRF6644TRPBF Datasheet
  • 1: $2.61000
  • 4800: $1.14955

FDMS3662

MOSFET N-CH 100V 8.9A/49A 8PQFN

FDMS3662 Datasheet
  • 1: $2.92000
  • 3000: $1.47136
  • 6000: $1.41997

SI7164DP-T1-GE3

MOSFET N-CH 60V 60A PPAK SO-8

SI7164DP-T1-GE3 Datasheet
  • 1: $2.94000
  • 3000: $1.48996
  • 6000: $1.43826

FDB52N20TM

MOSFET N-CH 200V 52A D2PAK

FDB52N20TM Datasheet
  • 1: $2.29000
  • 800: $1.45070
  • 1600: $1.33722

SIR470DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

SIR470DP-T1-GE3 Datasheet
  • 1: $2.95000
  • 3000: $1.39877
  • 6000: $1.34696

BSC042NE7NS3GATMA1

MOSFET N-CH 75V 19A/100A TDSON

BSC042NE7NS3GATMA1 Datasheet
  • 1: $2.67000
  • 5000: $1.22538

BSC082N10LSGATMA1

MOSFET N-CH 100V 13.8A 8TDSON

BSC082N10LSGATMA1 Datasheet
  • 1: $2.78000
  • 5000: $1.27615

Top