SPP80P06PHXKSA1

IR (Infineon Technologies)
In Stock: 4,208

Can ship immediately

Pricing:
  • 1$3.4
  • 10$3.03625
  • 100$2.4896
  • 500$2.01599
  • 1,000$1.70024

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Technical Details

  • Series:SIPMOS®
  • Package:Tube
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:23mOhm @ 64A, 10V
  • Vgs(th) (Max) @ Id:4V @ 5.5mA

 

  • Gate Charge (Qg) (Max) @ Vgs:173 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5033 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):340W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO220-3-1
  • Package / Case:TO-220-3

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