IPB110N20N3LFATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 88A TO263-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPB110N20N3LFATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 1,099
Can ship immediately
Pricing:
- 1$8.01
- 1,000$4.54129
- 2,000$4.37309
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Technical Details
- Series:OptiMOS™ 3
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:11mOhm @ 88A, 10V
- Vgs(th) (Max) @ Id:4.2V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs:76 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):250W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO263-3
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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