FCH023N65S3L4

ON Semiconductor
In Stock: 1,069

Can ship immediately

Pricing:
  • 1$13.04
  • 10$11.85142
  • 450$9.18458
  • 900$8.17723

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Technical Details

  • Series:SuperFET® III
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:23mOhm @ 37.5A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 7.5mA

 

  • Gate Charge (Qg) (Max) @ Vgs:222 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:7160 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):595W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247
  • Package / Case:TO-247-4

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