IMW120R045M1XKSA1

Technical Details

• Series:CoolSiC™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1.2 kV
• Current - Continuous Drain (Id) @ 25°C:52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:59mOhm @ 20A, 15V
• Vgs(th) (Max) @ Id:5.7V @ 10mA

• Gate Charge (Qg) (Max) @ Vgs:52 nC @ 15 V
• Vgs (Max):+20V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:1.9 nF @ 800 V
• FET Feature:-
• Power Dissipation (Max):228W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO247-3-41
• Package / Case:TO-247-3