NVHL020N120SC1

ON Semiconductor
In Stock: 51,718,135

Can ship immediately

Pricing:
  • 1$27.5

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:103A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:28mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id:4.3V @ 20mA

 

  • Gate Charge (Qg) (Max) @ Vgs:203 nC @ 20 V
  • Vgs (Max):+25V, -15V
  • Input Capacitance (Ciss) (Max) @ Vds:2890 pF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):535W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3 Variant

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