SSM3J35AMFV,L3F
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 250MA VESM
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM3J35AMFV,L3F Datasheet
-
ECAD Model
- Share
In Stock: 4,857
Can ship immediately
Pricing:
- 1$0.26
- 8,000$0.03744
- 16,000$0.03182
- 24,000$0.02995
- 56,000$0.02808
- 200,000$0.02621
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Technical Details
- Series:U-MOSVII
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:1.4Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id:1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±10V
- Input Capacitance (Ciss) (Max) @ Vds:42 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):150mW (Ta)
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Supplier Device Package:VESM
- Package / Case:SOT-723
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