In Stock: 5,290

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Pricing:
  • 1$0.45
  • 3,000$0.11147
  • 6,000$0.10529
  • 15,000$0.096
  • 30,000$0.0898
  • 75,000$0.08051

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Technical Details

  • Series:HEXFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:100mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 25µA

 

  • Gate Charge (Qg) (Max) @ Vgs:1 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:110 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.3W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:Micro3™/SOT-23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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