SSM3K123TU,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 4.2A UFM
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM3K123TU,LF Datasheet
-
ECAD Model
- Share
In Stock: 21,069
Can ship immediately
Pricing:
- 1$0.51
- 3,000$0.13739
- 6,000$0.12906
- 15,000$0.12073
- 30,000$0.11657
Quote It
Technical Details
- Series:U-MOSIII
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
- Rds On (Max) @ Id, Vgs:28mOhm @ 3A, 4V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:13.6 nC @ 4 V
- Vgs (Max):±10V
- Input Capacitance (Ciss) (Max) @ Vds:1010 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):500mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:UFM
- Package / Case:3-SMD, Flat Lead
