SI2399DS-T1-GE3

Vishay / Siliconix
In Stock: 37,663

Can ship immediately

Pricing:
  • 1$0.53
  • 3,000$0.20634
  • 6,000$0.19376
  • 15,000$0.18119
  • 30,000$0.17239

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Technical Details

  • Series:TrenchFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Rds On (Max) @ Id, Vgs:34mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:835 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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