SQS481ENW-T1_GE3

Vishay / Siliconix
In Stock: 4,234

Can ship immediately

Pricing:
  • 1$0.87
  • 3,000$0.78312
  • 6,000$0.7323
  • 15,000$0.70689
  • 30,000$0.69303

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Technical Details

  • Series:Automotive, AEC-Q101, TrenchFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.095Ohm @ 5A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:385 pF @ 75 V
  • FET Feature:-
  • Power Dissipation (Max):62.5W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® 1212-8
  • Package / Case:PowerPAK® 1212-8

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