BSC097N06NSATMA1

IR (Infineon Technologies)
In Stock: 15,894

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Technical Details

  • Series:OptiMOS™
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:9.7mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id:3.3V @ 14µA

 

  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1075 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 36W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-6
  • Package / Case:8-PowerTDFN

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