IPD80R1K4P7ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 4A TO252
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPD80R1K4P7ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 2,031
Can ship immediately
Pricing:
- 1$1.04
- 2,500$0.5165
- 5,000$0.49351
- 12,500$0.47709
- 25,000$0.4747
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Technical Details
- Series:CoolMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.4A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 500 V
- FET Feature:Super Junction
- Power Dissipation (Max):32W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-252
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
