FQB1P50TM

ON Semiconductor
In Stock: 2,622

Can ship immediately

Pricing:
  • 1$1.13
  • 800$0.66521
  • 1,600$0.60109
  • 2,400$0.56101
  • 5,600$0.53297
  • 20,000$0.51293

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Technical Details

  • Series:QFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:10.5Ohm @ 750mA, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.13W (Ta), 63W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D²PAK (TO-263AB)
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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