FQB30N06LTM

ON Semiconductor
In Stock: 3,424

Can ship immediately

Pricing:
  • 1$1.34
  • 800$0.80705
  • 1,600$0.73292
  • 2,400$0.68659
  • 5,600$0.65415

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Technical Details

  • Series:QFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:35mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1040 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.75W (Ta), 79W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D²PAK (TO-263AB)
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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