In Stock: 5,901

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Pricing:
  • 1$0.84
  • 10$0.74132
  • 100$0.57993
  • 500$0.43856
  • 1,000$0.35782

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Technical Details

  • Series:HEXFET®
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:600mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):43W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK (TO-251)
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA

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