IRLI640GPBF
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 9.9A TO220-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRLI640GPBF Datasheet
-
ECAD Model
- Share
In Stock: 1,339
Can ship immediately
Pricing:
- 1$3.5
- 50$2.83857
- 100$2.59598
- 500$2.12314
- 1,000$1.80786
- 2,500$1.72298
- 5,000$1.66236
Quote It
Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:9.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4V, 5V
- Rds On (Max) @ Id, Vgs:180mOhm @ 5.9A, 5V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
- Vgs (Max):±10V
- Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):40W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220-3
- Package / Case:TO-220-3 Full Pack, Isolated Tab
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