TP65H300G4LSG

Transphorm
In Stock: 398

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Pricing:
  • 1$4.02

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Technical Details

  • Series:-
  • Package:Tray
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):8V
  • Rds On (Max) @ Id, Vgs:312mOhm @ 5A, 8V
  • Vgs(th) (Max) @ Id:2.6V @ 500µA

 

  • Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 8 V
  • Vgs (Max):±18V
  • Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):21W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:3-PQFN (8x8)
  • Package / Case:3-PowerDFN

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