GAN063-650WSAQ

Nexperia
In Stock: 334

Can ship immediately

Pricing:
  • 1$12.37

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Technical Details

  • Series:Automotive, AEC-Q101
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:GaNFET (Cascode Gallium Nitride FET)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:34.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:60mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):143W (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3

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