NTMFS5832NLT1G

ON Semiconductor
In Stock: 397

Can ship immediately

Pricing:
  • 1$1.02
  • 1,500$0.43449
  • 3,000$0.40552
  • 7,500$0.38525
  • 10,500$0.37076

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Ta), 111A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:4.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta), 96W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:5-DFN (5x6) (8-SOFL)
  • Package / Case:8-PowerTDFN, 5 Leads

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