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  • 4,800$0.75638
  • 9,600$0.72794

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Technical Details

  • Series:HEXFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Ta), 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:4.5mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id:2.45V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2420 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2.2W (Ta), 42W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:DIRECTFET™ ST
  • Package / Case:DirectFET™ Isometric ST

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