TK4R3E06PL,S1X
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 80A TO220
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK4R3E06PL,S1X Datasheet
-
ECAD Model
- Share
In Stock: 1,424
Can ship immediately
Pricing:
- 1$2.07
- 50$1.67022
- 100$1.50315
- 500$1.16909
- 1,000$0.96867
- 2,500$0.93527
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Technical Details
- Series:U-MOSIX-H
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:7.2mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:48.2 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:3280 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):87W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220
- Package / Case:TO-220-3
