In Stock: 712

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Pricing:
  • 1$3.15
  • 10$2.81311
  • 100$2.30692
  • 500$1.86808
  • 1,000$1.57547

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Technical Details

  • Series:HEXFET®
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:210A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):7V, 10V
  • Rds On (Max) @ Id, Vgs:2.8mOhm @ 76A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:209 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:8250 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 230W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

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