SIHP24N65E-E3

Vishay / Siliconix
In Stock: 1,024

Can ship immediately

Pricing:
  • 1$5.98
  • 10$5.34314
  • 100$4.38104
  • 500$3.54753
  • 1,000$2.9919
  • 3,000$2.8423

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:145mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:122 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2740 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):250W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

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