LSIC1MO120E0120

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:27A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:150mOhm @ 14A, 20V
• Vgs(th) (Max) @ Id:4V @ 7mA

• Gate Charge (Qg) (Max) @ Vgs:80 nC @ 20 V
• Vgs (Max):+22V, -6V
• Input Capacitance (Ciss) (Max) @ Vds:1125 pF @ 800 V
• FET Feature:-
• Power Dissipation (Max):139W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-3
• Package / Case:TO-247-3