SIRC10DP-T1-GE3

Vishay / Siliconix
In Stock: 5,236

Can ship immediately

Pricing:
  • 1$0.92
  • 3,000$0.40653
  • 6,000$0.3862
  • 15,000$0.37168

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Technical Details

  • Series:TrenchFET® Gen IV
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
  • Vgs (Max):+20V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds:1873 pF @ 15 V
  • FET Feature:Schottky Diode (Body)
  • Power Dissipation (Max):43W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

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