IPSA70R1K4CEAKMA1

IR (Infineon Technologies)
In Stock: 1,463

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):700 V
  • Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 100µA

 

  • Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):53W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO251-3
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA

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