SIHD3N50D-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 500V 3A TO252AA
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIHD3N50D-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 1,572
Can ship immediately
Pricing:
- 1$0.97
- 10$0.84851
- 100$0.65451
- 500$0.48481
- 1,000$0.38785
- 3,000$0.35149
- 6,000$0.32725
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):500 V
- Current - Continuous Drain (Id) @ 25°C:3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:3.2Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:175 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):69W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-252AA
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
