FCP165N65S3
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 19A TO220-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FCP165N65S3 Datasheet
-
ECAD Model
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In Stock: 1,513
Can ship immediately
Pricing:
- 1$2.99
- 10$2.70957
- 100$2.19236
- 800$1.56248
- 1,600$1.44026
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Technical Details
- Series:SuperFET® III
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:165mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):154W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220-3
- Package / Case:TO-220-3
