SIHB180N60E-GE3

Vishay / Siliconix
In Stock: 1,151

Can ship immediately

Pricing:
  • 1$3.54
  • 10$3.17591
  • 100$2.62409
  • 500$2.1461
  • 1,000$1.82741
  • 2,500$1.74161
  • 5,000$1.68033

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Technical Details

  • Series:E
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:180mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1085 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):156W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D²PAK (TO-263)
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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