SIHG21N60EF-GE3

Vishay / Siliconix
In Stock: 299

Can ship immediately

Pricing:
  • 1$4.69
  • 10$4.18973
  • 100$3.43554
  • 500$2.78198
  • 1,000$2.34625
  • 2,500$2.22893

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:176mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2030 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):227W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247AC
  • Package / Case:TO-247-3

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