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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs:200mOhm @ 1.3A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SuperSOT-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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