3LP01S-TL-E

Rochester Electronics
In Stock: 216,122

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Pricing:
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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
  • Rds On (Max) @ Id, Vgs:10.4Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id:-

 

  • Gate Charge (Qg) (Max) @ Vgs:1.43 nC @ 10 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:7.5 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):150mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SMCP
  • Package / Case:SC-75, SOT-416

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