MCH5839-TL-W

Rochester Electronics
In Stock: 11,831

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:266mOhm @ 750mA, 4.5V
  • Vgs(th) (Max) @ Id:1.4V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:1.7 nC @ 4.5 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):800mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SC-88AFL/MCPH5
  • Package / Case:5-SMD, Flat Leads

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