IPS65R1K0CEAKMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 4.3A TO251
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPS65R1K0CEAKMA1 Datasheet
-
ECAD Model
- Share
In Stock: 2,048
Can ship immediately
Pricing:
- 1$0.24
- 1,500$0.24
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Technical Details
- Series:CoolMOS™ CE
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:328 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):37W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-251
- Package / Case:TO-251-3 Stub Leads, IPak
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